BT137Q-800E 8A 800V TO-263 markingBT137Q-800E Controllable Silicon yfwdiode brand

yfwdiode MOS transistor manufacture BT137Q-800E TO-263 data ,datasheet,Pin diagram,Package Specifications,manufacturer,Find MOS transistor_ BT137Q-800E TO-263_www.yfwdiode

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BT139Q-600E 16A 600V TO-263 markingBT139Q-600E Controllable Silicon yfwdiode brand

yfwdiode MOS transistor manufacture BT139Q-600E TO-263 data ,datasheet,Pin diagram,Package Specifications,manufacturer,Find MOS transistor_ BT139Q-600E TO-263_www.yfwdiode

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BT139Q-800E 16A 800V TO-263 markingBT139Q-800E Controllable Silicon yfwdiode brand

yfwdiode MOS transistor manufacture BT139Q-800E TO-263 data ,datasheet,Pin diagram,Package Specifications,manufacturer,Find MOS transistor_ BT139Q-800E TO-263_www.yfwdiode

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BTB16Q-600C 16A 600V TO-263 markingBTB16Q-600C Controllable Silicon yfwdiode brand

yfwdiode MOS transistor manufacture BTB16Q-600C TO-263 data ,datasheet,Pin diagram,Package Specifications,manufacturer,Find MOS transistor_ BTB16Q-600C TO-263_www.yfwdiode

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BTB16Q-800C 16A 800V TO-263 markingBTB16Q-800C Controllable Silicon yfwdiode brand

yfwdiode MOS transistor manufacture BTB16Q-800C TO-263 data ,datasheet,Pin diagram,Package Specifications,manufacturer,Find MOS transistor_ BTB16Q-800C TO-263_www.yfwdiode

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YFWG06T65AC-AS 6A 650V TO-220C-263 markingYFWG06T65AC-AS IGBT yfwdiode brand

Product characteristics: high disturbance resistance, very tight parameter distribution, positive VCE (saturated) temperature coefficient

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